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| BSP171P SIPMOS(R) Small-Signal-Transistor Features * P-Channel * Enhancement mode * Logic level * Avalanche rated * dv /dt rated Product Summary V DS R DS(on),max ID -60 0.3 -1.9 V A SOT-223 Type BSP 171 P Package SOT-223 Ordering Code Q67041-S4019 Marking 171P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 C1) T A=70 C1) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 C I D=-1.9 A, R GS=25 I D=-1.9 A, V DS=-48 V, di /dt =-200 A/s, T j,max=150 C -1.9 -1.5 -7.6 70 mJ A Unit Reverse diode dv /dt dv /dt -6 kV/s Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg T A=25 C1) 20 1.8 -55 ... 150 55/150/56 V W C Rev. 2.0 page 1 2004-01-20 BSP171P Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, steady state 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 A V GS(th) V DS=V GS, I D=-460 A V DS=-60 V, V GS=0 V, T j=25 C V DS=-60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-4.5 V, I D=-1.5 A V GS=-10 V, I D=-1.9 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.5 A -60 -1 -1.5 -2 V 25 K/W Values typ. max. Unit R thJA - - 110 - - 70 Zero gate voltage drain current I DSS - -0.1 -1 A - -10 -10 0.3 -100 -100 0.45 nA - 0.21 0.3 1.4 2.7 - S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 1) Rev. 2.0 page 2 2004-01-20 BSP171P Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 C V GS=0 V, I F=1.9 A, T j=25 C -0.84 -1.9 -7.6 -1.1 V A Q gs Q gd Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-48 V, I D=1.9 A, V GS=0 to -10 V -1.2 -5 -13 -3 -5 -1.6 -7 -20 -7 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-25 V, V GS=-10 V, I D=-1.9 A, R G=6 V GS=0 V, V DS=-25 V, f =1 MHz 365 105 40 6 25 208 87 460 135 55 8 33 276 130 ns pF Values typ. max. Unit Reverse recovery time t rr V R=-30 V, I F=|I S|, di F/dt =100 A/s - 80 120 ns Reverse recovery charge Q rr - -125 -190 nC 2) See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2004-01-20 BSP171P 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); |V GS|10 V 2 2 1.5 1.5 P tot [W] -I D [A] 1 1 0.5 0.5 0 0 40 80 120 160 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operation area I D=f(V DS); T A=25 C ; D =0 parameter: t p 101 10 s 100 s 1 ms 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 102 1) 0.5 10 ms 0.2 100 100 ms 101 0.1 Z thJS [K/W] -I D [A] 0.05 limited by on-state resistance 0.02 10-1 DC 100 0.01 single pulse 10-2 0.1 1 10 100 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 -V DS [V] t p [s] Rev. 2.0 page 4 2004-01-20 BSP171P 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 5 -5.5 V -5 V -10 V -4.5 V -4 V -3 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 600 4 500 -3.5 V 400 R DS(on) [m] 3 -4 V -4.5 V -5 V -5.5 V -10 V -I D [A] -3.5 V 300 2 200 -3 V 1 100 -2.5 V 0 0 1 2 3 4 5 0 0 1 2 3 4 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 6 8 Typ. forward transconductance g fs=f(I D); T j=25 C 5 5 4 4 3 -I D [A] 3 g fs [S] 2 1 125 C 25 C 2 1 0 0 1 2 3 4 5 0 0 1 2 3 4 -V GS [V] -I D [A] Rev. 2.0 page 5 2004-01-20 BSP171P 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-460 A 500 3 400 98 % 2.5 2 max. R DS(on) [m] -V GS(th) [V] 300 1.5 typ. 200 typ. 1 min. 100 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 101 25 C, typ 150 C, typ Ciss 150 C, 98% 100 Coss 25 C, 98% C [pF] 102 Crss I F [A] 10-1 10-2 0 10 20 30 0 0.5 1 1.5 101 -V DS [V] -V SD [V] Rev. 2.0 page 6 2004-01-20 BSP171P 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 10 14 Typ. gate charge V GS=f(Q gate); I D=-1.9 A pulsed parameter: V DD 12 0.5 VBR(DSS) 10 25 C 8 0.2 VBR(DSS) 0.8 VBR(DSS) -I AV [A] 1 125 C 100 C V GS [V] 1000 6 4 2 0.1 1 10 100 0 0 5 10 15 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-1 mA 16 Gate charge waveforms 70 V GS 65 Qg 60 -V BR(DSS) [V] 55 V g s(th) 50 45 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 40 T j [C] Rev. 2.0 page 7 2004-01-20 BSP171P Package Outline SOT-223: Outline Footprint Packaging Tape Dimensions in mm Rev. 2.0 page 8 2004-01-20 BSP171P Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2004-01-20 |
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